Electron g-factor determined for quantum dot circuit fabricated from (110)-oriented GaAs quantum well
T. Nakagawa 1, S.Lamoureux 2,3, T.Fujita 1,4, J. Ritzmann 5, A. Ludwig 5,
A. D. Wieck 5, A. Oiwa 1,4,6, M. Korkusinski 2, A. Sachrajda 2, D. G. Austing 2, and L. Gaudreau 2
Journal of Applied Physics 131, 134305 (2022)
1 SANKEN, Osaka University, 8-1 Mihogaoka, Ibaraki-shi, Osaka 567-0047, Japan
2 Emerging Technology Division, National Research Council, Ottawa K1A0R6, Canada
3 Département de Physique, Université de Sherbrooke, Sherbrooke J1K 2R1, Canada
4 Center for Quantum Information and Quantum Biology (QIQB), Osaka University, Osaka 565-0871, Japan
5 Lehrstuhl für Angewandte Festkörperphysik, Ruhr-Universität Bochum, Universitätsstraße 150, Gebäude NB,Bochum D-44780, Germany
6 Center for Spintronics Research Network (CSRN), Graduate School of Engineering Science, Osaka University,Osaka 560-8531, Japan
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